data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. npn silicon rf transistor 2sc3356 npn epitaxial silicon rf transistor for microwave low-noise amplification 3-pin minimold document no. pu10209ej01v0ds (1st edition) (previous no. p10356ej5v1ds00) date published january 2003 cp(k) printed in japan the mark ? ? ? ? shows major revised points. ? ? ? ? nec compound semiconductor devices 1985, 2003 features ? low noise and high gain : nf = 1.1 db typ., g a = 11 db typ. @ v ce = 10 v, i c = 7 ma, f = 1 ghz ? high power gain : mag = 13 db typ. @ v ce = 10 v, i c = 20 ma, f = 1 ghz ordering information part number quantity supplying form 2sc3356 50 pcs (non reel) ? 8 mm wide embossed taping 2sc3356-t1 3 kpcs/reel ? pin 3 (collector) face the perforation side of the tape remark to order evaluation samples, contact your nearby sales office. the unit sample quantity is 50 pcs. absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 12 v emitter to base voltage v ebo 3.0 v collector current i c 100 ma total power dissipation p tot note 200 mw junction temperature t j 150 c storage temperature t stg - 65 to +150 c note free air
data sheet pu10209ej01v0ds 2 2sc3356 electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 10 v, i e = 0 ma C C 1.0 m a emitter cut-off current i ebo v eb = 1.0 v, i c = 0 ma C C 1.0 m a dc current gain h fe note 1 v ce = 10 v, i c = 20 ma 50 120 250 C rf characteristics gain bandwidth product f t v ce = 10 v, i c = 20 ma C 7 C ghz insertion power gain ? s 21e ? 2 v ce = 10 v, i c = 20 ma, f = 1 ghz C 11.5 C db noise figure nf v ce = 10 v, i c = 7 ma, f = 1 ghz C 1.1 2.0 db reverse transfer capacitance c re note 2 v cb = 10 v, i e = 0 ma, f = 1 mhz - 0.55 1.0 pf notes 1. pulse measurement: pw 350 m s, duty cycle 2% 2. collector to base capacitance when the emitter grounded h fe classification rank r23/q note r24/r note r25/s note marking r23 r24 r25 h fe value 50 to 100 80 to 160 125 to 250 note old specification/new specification
data sheet pu10209ej01v0ds 3 2sc3356 typical characteristics (t a = +25 c, unless otherwise specified) dc current gain h fe collector current i c (ma) dc current gain vs. collector current 200 50 100 10 20 1510 0.5 50 v ce = 10 v 250 200 150 100 50 0 25 50 75 100 125 150 total power dissipation p tot (mw) ambient temperature t a (?c) total power dissipation vs. ambient temperature free air reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage 2 1 0.5 0.3 0.5 0.2 1 2 5 10 30 20 f = 1 mhz v ce = 10 v gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 10 2 5 0.2 0.5 1 0.1 1 5 10 50 0.1 0.5 100 v ce = 10 v f = 1 ghz collector current i c (ma) insertion power gain vs. collector current insertion power gain |s 21e | 2 (db) 15 10 0 5 0.5 1 10 50 570 v ce = 10 v i c = 20 ma frequency f (ghz) insertion power gain, mag vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) 25 15 20 5 10 0 0.05 0.1 0.5 1 0.2 2 mag |s 21e | 2
data sheet pu10209ej01v0ds 4 2sc3356 7 0 1 2 3 4 5 6 0.5 1 5 10 50 70 collector current i c (ma) noise figure vs. collector current noise figure nf (db) v ce = 10 v f = 1 ghz 5 4 3 2 1 0 15 3 6 9 12 0 246810 collector to emitter voltage v ce (v) noise figure, insertion power gain vs. collector to emitter voltage noise figure nf (db) insertion power gain |s 21e | 2 (db) f = 1 ghz i c = 20 ma |s 21e | 2 nf remark the graphs indicate nominal characteristics. s-parameters s-parameters/noise parameters are provided on the nec compound semiconductor devices web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] ? [device parameters] url http://www.csd-nec.com/
data sheet pu10209ej01v0ds 5 2sc3356 smith chart s 21e -frequency condition : v ce = 10 v, i c = 20 ma 90? 0? 30? C30? 60? C60? 180? 150? C150? 120? C120? C90? 5 10 15 20 s 21e 0.2 ghz 2.0 ghz s 12e -frequency condition : v ce = 10 v, i c = 20 ma 90? 0? 30? C30? 60? C60? 180? 150? C150? 120? C120? C90? 0.05 0.1 0.15 0.2 0.25 s 12e 0.2 ghz 2.0 ghz s 11e , s 22e -frequency condition : v ce = 10 v, 200 mhz step 60 20 30 40 50 70 80 90 100 110 120 130 140 150 - 160 - 150 - 140 - 130 - 120 - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.02 0.01 0 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.46 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.48 0.49 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 w a v e l e n g t h s t o w a r d l o a d a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s w a v e l e n g t h s t o w a r d g e n e r a t o r reactance component ( r CCCC z o ) ( +jx CCCC z o ) p os i t i v e r e a c t a n c e co m p o n e n t ne g a t ive r e a c t a n c e c om p o n e n t ( - jx CCCC z o ) 0.8 0.7 0.6 0.3 0.2 0.1 0.4 0.5 5.0 10 50 3.0 4.0 1.8 2.0 1.2 1.0 0.9 1.4 1.6 20 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.0 20 0.2 ghz 0.2 ghz 2.0 ghz 0.2 ghz i c = 20 ma s 22e s 11e i c = 20 ma i c = 5 ma i c = 5 ma 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 1.0 0.8 0.6 0.4 1.0 0.8 0.6 0.2 0.4 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0 1.2
data sheet pu10209ej01v0ds 6 2sc3356 package dimensions 3-pin minimold (unit: mm) 2.80.2 1.5 2 1 3 2.90.2 0.95 0.95 0.4 +0.1 C0.05 0.4 +0.1 C0.05 0.65 +0.1 C0.15 0.16 +0.1 C0.05 0.3 0 to 0.1 1.1 to 1.4 marking 1. emitter 2. base 3. collector pin connections
data sheet pu10209ej01v0ds 7 2sc3356 m8e 00. 4 - 0110 the information in this document is current as of january, 2003. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above).
nec compound semiconductor devices hong kong limited hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-528-0301 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-528-0302 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-01 fax: +49-211-6503-487 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0209 nec compound semiconductor devices, ltd. 5th sales group, sales division tel: +81-3-3798-6372 fax: +81-3-3798-6783 e-mail: salesinfo@csd-nec.com business issue nec compound semiconductor devices, ltd. http://www.csd-nec.com/ sales engineering group, sales division e-mail: techinfo@csd-nec.com fax: +81-44-435-1918 technical issue 2sc3356
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